sibod series
thyristors (sibod breakover devices) crydom s sibod series equals ?row bar?protection to protect sensitive telecommunications circuitry, crydom thyristors (sibod breakover devices) ?row bar?potential- ly dangerous transients ?switching them to ground and dissipating the voltage to zero. this approach can handle more energy than tvs diode ?lamping. features glass passivated junction bi-directional transient voltage protection nano second clamping response surge capability up to 500 amps no performance degradation under service life benefits one component cost for +ve and -ve protection excellent voltage protection levels can be used for primary or secondary protection no replacement required ie, no maintenance cost highest level of quality and reliability low cost auto assembly mechanical characteristics transfer molded, void free epoxy body tin/lead plated leads maximum case temperature for solder- ing purposes: 230? for 10 seconds sibod series to order: 1-877-502-5500 fax: 1-858-715-7280 specify crydom ?for these industry-leading components and products: solid state relays printed circuit board mount panel mount din rail mount power cubes i/o modules transient voltage suppression components tvs diodes thyristor suppression devices gas discharge tubes (gdt) zeners/studs hybrid arrester devices get tvs insurance from the people who know there s too much riding on over-voltage surge protection to take chances. that s why more and more people are turning to crydom. why? to start with, we don t just sell tvs compo- nents ?we?e the only company develop- ing, designing and manufacturing all five of the basic product families: transient voltage suppression (tvs) diodes. sibod thyristor suppression devices. gas discharge tubes (gdt). hybrid arrester over-voltage surge protectors. zeners/studs. and the only company employing all three voltage protection technologies ?gas tube, semi- conductor and hybrid. that means we're the only one who knows them inside and out. what each type can and can't do. which type to use for differ- ent applications. how to provide as much or little technical support as you need. how to work with you to develop special devices should you require them. and even assist you in formulating design requirements and testing procedures to meet both your specifications and inter- national standards.
dc supply r equipment to be protected v c i h > v c r slic protection cr0640sb cr0640sb to slic line line (-) cr0640sb to slic line line (-) (+) (-) or complete pc board operation protection (-) cr0640 sb (-) (+) (-) integrated slic -v battery line line secondary protection off-hook primary protection on-hook cr2300 sb ring relay on-hook off-hook on-hook off-hook ring generator or ring detection circuit pabx protection cr1300sb cr1300sb 2 to order: 1-877-502-5500 fax: 1-858-715-7280 thyristors (sibod breakover devices) sibod series application notes the added crydom benefit crydom thyristors ( sibod breakover devices) offer the highest quality and performance. they also come with an added benefit ?service and technical assistance to help ensure optimum pro- tection for your telecommunications application. sibod series the crydom sibod is a four-layer thyristor- based protector designed specifically for telecommunications applications. it has greater capacity for diverting surge cur- rents than an avalanche tvs device. the crydom series protector is based on the proven technology of the sibod prod- uct. designed for transient voltage protec- tion of telecommunications equipment, it provides higher power handling than a conventional avalanche diode (tvs), and when compared to a gdt offers lower volt- age clamping levels and infinite surge life. electrical characteristics the electrical characteristics of the sibod devices are similar to those of a self-gated triac, but the sibod are two- terminal devices with no gate. the gate function is achieved by an internal current controlled mechanism. like the tvs diodes, the sibod have a stand-off voltage (v rm ) that should be equal to or greater than the operating voltage of the system to be protected. at this voltage (v rm ) the current consumption of the sibod are negligible and will not effect the pro- tected system. when a transient occurs, the voltage across the sibod will increase until the breakdown voltage (v br ) is reached. at this point the device will operate in a similar way to a tvs device and is in an avalanche mode. the voltage of the transient will now be limited and will only increase by a few volts as the device diverts more current. as this transient current rises, a level of current through the device is reached (i bo ), causing the device to switch to a fully conductive state such that the volt- age across the device is now only a few volts (v t ). the voltage at which the device switches from the avalanche mode to the fully conductive state (v t ) is known as the breakover voltage (v bo ). when the device is in the v t state, high currents can be diverted without damage to the sibod due to the low voltage across the device, since the limiting factor in such devices is dissipated power (v x i). resetting of the device to the nonconduct- ing state is controlled by the current flowing through the device. when the current falls below a certain value, known as the holding current (i h ), the device resets automatically. as with the avalanche tvs device, if the sibod device is subjected to a surge current that is beyond its maximum rating, the device will fail in short-circuit mode, which ensures that the equipment is ultimately protected.
selecting a sibod device 1. when selecting a device, it is important that the v rm of the device be equal to or greater than the operating voltage of the system. for example, when protecting the ringing circuit of a telephone handset, sibod v rm > v dc + ringing voltage sibod v rm > v dc + v 2x ringing voltage 2. the minimum holding current (i h ) of the device must be carefully selected if the sibod is to reset after diverting a surge. the minimum i h value of the sibod must be greater than the current the system is capable of delivering, otherwise the device will remain conducting following a transient condition. to order: 1-877-502-5500 fax: 1-858-715-7280 3 thyristors (sibod breakover devices) sibod series application notes v oltage v olts 800 1500 1000 1500 600 1000 1000 2500 1000 1500 1000 1500 4000 1500 1000 2000 2000 level 3 level 4 2000 w aveform sec 10x560 10x160 9x720 9x720 10x1000 10x360 10x1000 2x10 10x360 10x700 10x700 10x700 10x700 .5x700 .5x700 10x700 1.2x50 10x700 1.2x50 10x700 c urrent amps 100 200 25 37.5 100 100 100 500 25 37.5 25/100 37.5 100 38 25 50 50 50 100 50 w aveform sec 10x560 10x160 5x320 5x320 10x1000 10x360 10x1000 2x10 10x360 5x310 5x310 5x310 5x310 .2x310 .8x310 5x310 1x20 5x310 8x20 5x310 i h > system voltage source impedance the sibod range can be used to protect against surges as defined in the following international standards standard fcc part 68 surge a metallic surge a longitudinal surge b metallic surge b longitudinal bellcore gr 1089 1 2 3 4 5 itu k.17 itu k.20 itu k.21 rlm 88, cnet cnet 131-24 vde 0433 vde 0878 iec 61000-4-5 ftz r12 s i bod s eries b or c c a, b or c a, b or c c b or c c c a, b or c a, b or c a, b or c a, b or c b or c a, b or c a, b or c a, b or c a, b or c a, b or c a, b or c a, b or c
4 to order: 1-877-502-5500 fax: 1-858-715-7280 i rm i bo i h i t v rm v t v br min. v bo v-i graph illustrating symbols and terms for the sibod surge protection devices thyristors (sibod breakover devices) sibod series electrical characteristics (tj = 25?) symbol parameter v rm stand-off voltage v br breakdown voltage v bo /v s breakover voltage v t on-state voltage i rm stand-off current i bo breakover current i h holding current co off state capacitance ipp peak pulse current parameter storage and operating junction temperature range maximum temperature for soldering (for period of 10 seconds max.) maximum case temperature value absolute ratings symbol t stg tj t l t c 30 100 50 10 20 30 40 50 60 70 90 tr t 1 t 2 td = 50 s v rsm v rsm tr=1.67 x (t 2 -t 1 )=1.2 s time ( s) percentage peak voltage 10 100 50 percentage peak current 10 2 0 30 40 50 90 t 1 t 2 tr 1 rsm 1 rsm 1 sm tr = 1.25 x (t 2 -t 1 ) = 8 s td= 20 s or time ( s) do-214 -40 to 150 150 230 75 to-220 -40 to 150 150 230 115 t10 -40 to 150 150 230 75 unit c? c? c? c?
5.21/5.59 4.06/4.57 .102 .203 0.76/1.27 seating plane 0.076 max. 2.0 3.30-3.81 2.18/2.44 2.26 solder pads all dimensions in mm 2.1 2.74 2.16 to order: 1-877-502-5500 fax: 1-858-715-7280 5 thyristors (sibod breakover devices) sibod series do-214 tape & reel packaging our surface-mount components are placed in embossed cavities of anti-stat- ic/conductive carrier tape and sealed with a cover tape. the taped devices are supplied in reels in protective boxes. the standard crydom lead-tape packaging of surface-mount components follow the requirements of eia 481-1, shown below: cover tape: this will not extend over the edge of the carrier tape or extend over any part of the sprocket holes. carrier tape: this will release from the reel hub as the last portion of the tape unwinds from the reel without damage to the carrier tape and with the components remaining in the cavities. leader tape: a minimum length of 300mm leader (and trailer) of tape will be provided before the first (and after the last) component on the reel, with a minimum of forty empty component car- rier pockets covered with tape. direction of tape feed sprocket holes cover tape embossed carrier jedec case type do-214aa tape width (mm) 12 quantity per reel 330mm reel (?) (t3) 3000 cr s voltage pp maximum a = 50a (10 x 560 2/10s 8/20s 10/160s 10/560s 10/1000s sa - 150 100 50 - sb - 250 150 100 - sc 500 400 200 - 100 stock device code reverse maximum maximum maximum maximum minimum typical number stand-off breakover voltage reverse breakover holding capacitance voltage voltage turnon leakage current current @1mhz (v r )(v bo ) @ i bo (v t ) @ 1a (i r ) @ v r (i bo ) (i h ) 2v bias vvvamamapf CR0300 sa, sb, sc cr0640 sa, sb, sc cr0720 sa, sb, sc cr0800 sa, sb, sc cr1100 sa, sb, sc cr1300 sa, sb, sc cr1500 sa, sb, sc cr1800 sa, sb, sc cr2300 sa, sb, sc cr2600 sa, sb, sc cr3100 sa, sb, sc cr3500 sa, sb, sc cr4000 sa, sb, sc 030 a, b, or c 064 a, b, or c 072 a, b, or c 080 a, b, or c 110 a, b, or c 130 a, b, or c 150 a, b, or c 180 a, b, or c 230 a, b, or c 260 a, b, or c 310 a, b, or c 350 a, b, or c 400 a, b or c electrical characteristics do-214 800.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 5 5 5 5 5 5 5 5 5 5 5 5 5 200.0 120.0 90.0 90.0 90.0 60.0 60.0 60.0 45.0 45.0 45.0 45.0 45.0 40 77 88 98 130 160 180 220 260 300 350 400 450 5 5 5 5 5 5 5 5 5 5 5 5 5 25 58 65 75 90 120 140 160 190 220 275 320 375 *note: the typical capacitance values listed in this chart are for sa and sb. sc capacitance is approximately double that of sa and sb. *
part reverse maximum reverse maximum typical maximum maximum minimum typical number stand-off breakover stand-off breakover voltage reverse breakover holding cap. voltage voltage voltage voltage turnon leakage current current @1mhz (v r )(v bo ) @ i bo (v r )(v bo ) @ i bo (v t ) @ 1a (i r ) @ v r (i bo ) (i h ) 2v bias pins 1-2 & 3-2 pins 1-3 vv v vv amamapf cr1553 aa, ab, ac cr1803 aa, ab, ac cr2103 aa, ab, ac cr2353 aa, ab, ac cr2703 aa, ab, ac cr3203 aa, ab, ac cr3403 aa, ab, ac 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10.0 10.0 10.0 10.0 10.0 10.0 10.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 60.0 60.0 60.0 60.0 45.0 45.0 45.0 180.0 210.0 250.0 270.0 300.0 350.0 400.0 130.0 150.0 170.0 200.0 230.0 270.0 300.0 180.0 210.0 250.0 270.0 300.0 350.0 400.0 130.0 150.0 170.0 200.0 230.0 270.0 300.0 electrical characteristics (3 chip) 6 to order: 1-877-502-5500 fax: 1-858-715-7280 thyristors (sibod breakover devices) cr a voltage pp maximum a = 50a (10 x 560 2/10s 8/20s 10/160s 10/560s 10/1000s aa - 150 100 50 - ab - 250 150 100 - ac 500 400 200 - 100 sibod series to-220 part reverse maximum reverse maximum typical maximum maximum minimum typical number stand-off breakover stand-off breakover voltage reverse breakover holding cap. voltage voltage voltage voltage turnon leakage current current @1mhz (v r )(v bo ) @ i bo (v r )(v bo ) @ i bo (v t ) @ 1a (i r ) @ v r (i bo ) (i h ) 2v bias pins 1-2 & 3-2 pins 1-3 vv v v vamamapf cr0602 aa, ab, ac cr1402 aa, ab, ac cr1602 aa, ab, ac cr2202 aa, ab, ac cr2702 aa, ab, ac cr3002 aa, ab, ac cr3602 aa, ab, ac cr4202 aa, ab, ac cr4802 aa, ab, ac cr6002 aa, ab, ac 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 200.0 120.0 90.0 90.0 60.0 60.0 60.0 45.0 45.0 45.0 80.0 154.0 190.0 260.0 320.0 360.0 440.0 500.0 600.0 700.0 50.0 116.0 130.0 180.0 240.0 280.0 320.0 380.0 440.0 550.0 40.0 77.0 95.0 130.0 160.0 180.0 220.0 250.0 300.0 350.0 25.0 58.0 65.0 90.0 120.0 140.0 160.0 190.0 220.0 275.0 electrical characteristics (2 chip) *note: the typical capacitance values listed in this chart are for aa and ab. ac capacitance is approximately double that of aa and ab. *note: the typical capacitance values listed in this chart are for aa and ab. ac capacitance is approximately double that of aa and ab. 2.54 all dimensions in mm 5.08 0.8 10.16 10.42 4.52 4.78 0.61 0.46 7.9 8.2 11.1 11.3 9.14 9.53 3.2 3.1 modified to-220 * *
to order: 1-877-502-5500 fax: 1-858-715-7280 7 thyristors (sibod breakover devices) sibod series t10a, t10b, t10c minimum holding currents i h min. suffix i h b120 e180 t10 package a = do15 b = do-201 c = gdt outline voltage holding current b = 120 i h min. e = 180 i h min. features high current diverting capability, 150 a, 8 x 20 ?) low capacitance, less than 100 pf peak pulse 8/20? 10/700 1-5kv 10/1000? t10a 150 37.5 50 t10b 250 125 100 t10c 250 125 100 electrical characteristics t10a t10c 1.016 0.050 25.4 min. 25.4 min. 5.080 +0.127 -0.254 9.400 +0.127 -0.254 all dimensions in mm t10b device type t10 a, b, c 080 t10 a, b, c 110 t10 a, b, c 140 t10 a, b, c 180 t10 a, b, c 220 t10 a, b, c 270 i rm @ v rm (?) 1 1 1 1 1 1 v br min. @ 1 ma (v) 80 110 140 180 215 270 v bo max. (v) 120 135 170 210 265 360 v t typ @ 1a (v) 2 2 2 4 4 4 i bo typ (ma) 50 50 50 50 50 50 i h min. (ma) b or e b or e b or e b or e b or e b or e v rm (v) 70 100 120 170 200 240
ordering information for recommended applications and more information contact: sales: 1-877-502-5500 technical support: 1-877-702-7700 corporate headquarters: 1-858-715-7200 fax: 1-858-715-7280 e-mail: sales@crydom.com website: www.crydom.com fastfax product info: 1-888-267-9191 thyristors (sibod breakover devices) sibod series about crydom over the years crydom has become the supplier of choice for advanced, high-quality products like those featured here. it's the result of our teams of design and production engineers ?material, production control, and quality assurance experts, and more working seamlessly together to create, pro- duce, and deliver superior components and products that satisfy the most demanding environmental and performance require- ments. we focus on timely delivery and competitive pricing aimed at meeting your needs and helping you succeed in today's fast-paced, fast-changing global markets. crydom 9525 chesapeake drive san diego, ca 92123 usa ?999 crydom specifications subject to change without notice. crydom sibobseries 1099-5000 ver a specify crydom ?for these industry-leading components and products: solid state relays printed circuit board mount panel mount din rail mount power cubes i/o modules transient voltage suppression components tvs diodes thyristor suppression devices gas discharge tubes (gdt) zeners/studs hybrid arrester devices
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